maximum ratings (sot-563 package): (t a =25c) symbol units power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w maximum ratings q1: (t a =25c) symbol units collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current i c 200 ma maximum ratings d1: (t a =25c) symbol units peak repetitive reverse voltage v rrm 40 v continuous forward current i f 500 ma peak repetitive forward current, tp 1ms i frm 3.5 a forward surge current, tp = 8ms i fsm 10 a electrical characteristics q1: (t a =25c unless otherwise noted) symbol test conditions min typ max units i cev v ce =30v, v eb =3.0v - - 50 na bv cbo i c =10a 60 120 - v bv ceo i c =1.0ma 40 60 - v bv ebo i e =10a 6.0 7.5 v v ce(sat) i c =10ma, i b =1.0ma 0.057 0.100 v v ce(sat )i c =50ma, i b =5.0ma 0.090 0.200 v v be(sat )i c =10ma, i b =1.0ma 0.65 0.75 0.85 v v be(sat )i c =50ma, i b =5.0ma 0.85 0.95 v h fe v ce =1.0v, i c =0.1ma 90 180 h fe v ce =1.0v, i c =1.0ma 100 185 h fe v ce =1.0v, i c =10ma 100 180 300 h fe v ce =1.0v, i c =50ma 70 150 h fe v ce =1.0v, i c =100ma 30 90 f t v ce =20v, i c =10ma, f=100mhz 300 mhz c ob v cb =5.0v, i e =0, f=1.0mhz 4.0 pf c ib v be =0.5v, i c =0, f=1.0mhz 8.0 pf h ie v ce =10v, i c =1.0ma, f=1.0khz 1.0 12 k ? h re v ce =10v, i c =1.0ma, f=1.0khz 0.1 10 x10 -4 CMLM0405 multi discrete module ? surface mount low v ce (sat) silicon npn transistor and low v f silicon schottky diode sot-563 case central semiconductor corp. tm r1 (22-february 2005) description: the central semiconductor CMLM0405 is a single npn transistor and schottky diode packaged in a space saving sot-563 case and designed for small signal general purpose applications where size and operational efficiency are prime requirements. ? complementary device: cmlm0605 ? combination low v ce (sat) transistor and low v f schottky diode. marking code: c45 tm
central semiconductor corp. tm CMLM0405 multi discrete module ? surface mount low v ce (sat) silicon npn transistor and low v f silicon schottky diode r1 (22-february 2005) symbol test conditions min max units h fe v ce =10v, i c =1.0ma, f=1.0khz 100 400 h oe v ce =10v, i c =1.0ma, f=1.0khz 1.0 60 mhos nf v ce =5.0v,i c =100a, r s =1.0k ? , 4.0 db f=10hz to 15.7khz t d v cc =3.0v, v be =0.5v, i c =10ma, i b1 =1.0ma 35 ns t r v cc =3.0v, v be =0.5v, i c =10ma, i b1 =1.0ma 35 ns t s v cc =3.0v, i c =10ma, i b1 =i b2 =1.0ma 200 ns t f v cc =3.0v, i c =10ma, i b1 =i b2 =1.0ma 50 ns electrical characteristics d1 (t a =25c) i r v r = 10v 20 a i r v r = 30v 100 a bv r i r = 500a 40 v v f i f = 100a 0.13 v v f i f = 1.0ma 0.21 v v f i f = 10ma 0.27 v v f i f = 100ma 0.35 v v f i f = 500ma 0.47 v c t v r = 1.0v, f=1.0 mhz 50 pf a b c h g f d e e r0 12 3 65 4 sot-563 - mechanical outline lead code: 1) emitter q1 2) base q1 3) cathode d1 4) anode d1 5) anode d1 6) collector q1 marking code: c45 electrical characteristics q1 (continued)
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